Published May 1986
| Version v1
Journal article
An investigation of the tungsten silicide formed by As ion beam mixing with Rutherford backscattering
Creators
- 1. Beijing Normal Univ. (China). Inst. of Low Energy Nuclear Physics
Description
The conditions of forming tungsten silicide with As ion beam mixing have been studied by means of Rutherford backscattering. The comparison between sintering and ion beam mixing has been performed. The phases have been also identified by X-ray diffraction. The results demonstrated that the refractory metal silicide may be formed at a reduced reaction temperature using ion beam mixing technique. The effect of oxygen impurity on silicide formation has been observed. Finally, the mechanism on the formation of the silicide by ion beam mixing is simply discussed
Additional details
Publishing Information
- Journal Title
- Nucl. Tech.
- Journal Issue
- no.5
- Series
- Nucl. Tech.
- ISSN
- 0253-3219
- CODEN
- NUTED
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 18096513
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ANNEALING; ARSENIC IONS; IMPURITIES; ION BEAMS; IRRADIATION; MIXING; OXYGEN; RADIATION SCATTERING ANALYSIS; RUTHERFORD SCATTERING; SINTERING; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; TUNGSTEN SILICIDES; X-RAY DIFFRACTION
- Descriptors DEC
- ATOMIC IONS; BEAMS; CHARGED PARTICLES; CHEMICAL ANALYSIS; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELASTIC SCATTERING; ELEMENTS; FABRICATION; FILMS; HEAT TREATMENTS; IONS; NONDESTRUCTIVE ANALYSIS; NONMETALS; SCATTERING; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS