Published April 1991
| Version v1
Journal article
Thermal wave characterization of silicon implanted with MeV phosphorus ions
- 1. Micron Tech. Inc., Boise, ID (USA)
- 2. Ion Implant Services, Sunnyvale, CA (USA)
Description
We have performed laser-induced photothermal reflectance measurements on p-type (100) silicon wafers implanted with phosphorus in the energy range of 0.5 to 3 MeV. The dose for implants was varied from 1x1012 to 1x1014 ions/cm2. The variation of thermal wave signal for different implant angles and species has been studied. The signal was sensitive to the dose, energy and tilt angle of the implantation. We have determined that this technique can be used to monitor high energy implantations into Si substrates. (orig.)
Additional details
Additional titles
- Augmented title (English)
- Si:P
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section B
- Journal Volume
- 55
- Journal Issue
- 1-4
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 266-268
- ISSN
- 0168-583X
- CODEN
- NIMBE
Conference
- Title
- 8. international conference on ion implantation technology (IIT-8).
- Dates
- 30 Jul - 3 Aug 1990.
- Place
- Guildford (UK).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 22083756
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; HEAT TRANSFER; IMPLANTS; ION IMPLANTATION; KEV RANGE 100-1000; MEASURING METHODS; MEV RANGE 01-10; P-TYPE CONDUCTORS; PHOSPHORUS IONS; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; ENERGY TRANSFER; HEAT TREATMENTS; IONS; KEV RANGE; MATERIALS; MEV RANGE; SEMICONDUCTOR MATERIALS; SEMIMETALS