Published 1990 | Version v1
Journal article Metadata-only

Photostimulated transformation of self-compensated gallium arsenide EL2 luminescence

Creators

  • 1. AN Ukrainskoj SSR, Kiev (Ukrainian SSR). Inst. Poluprovodnikov

Description

A new effect of photostimulated trasnsformation in self-compensated gallium arsenide was revealed. Its relationship with complex energetic and spatial structure of EL2 centers was proved. It is sufficient that revealed centers are transformed to a new radiative state under the effect of light, this differs them from all earlier investigated representations of EL2-family

Additional details

Additional titles

Original title (Russian)
Поверхност' арсенида галлия, легированного изовалентной примесью-сурьмой

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
16
Journal Issue
2
Series
Pis'ma Zh. Tekh. Fiz.
Journal Page Range
40-43
ISSN
0320-0116
CODEN
PZTFD

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
22039687
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHROMIUM ADDITIONS; CRYSTALS; E CENTERS; EMISSION SPECTRA; EXCITATION; GALLIUM ARSENIDES; INFRARED RADIATION; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; STIMULATED EMISSION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; POINT DEFECTS; RADIATIONS; SPECTRA; VACANCIES