Interference effects in the Si-Ge heterostructures with quantum wells of different width

The effects of weak localization and interaction of charge carriers in a two p-type Si₀.7Ge0_.3/Si_0.2Ge_0.8/Si_0.7Ge_0.3 heterostructures with one and two subbands, respectively, occupy have been investigated. The weak localization effect of holes in conditions when the inelastic scattering time and spin orbit scattering time have close values was found in very weak magnetic fields. It is shown that splitting of the spin states occurs due to the influence of the perturbing potential (Rashba mechanism). The interaction effect which occurs due to Coulomb interaction with a scatter has been detected and analyzed in higher magnetic fields in case of one subband occupy. The dominant mechanism of scattering by Friedel oscillations of the charge carrier density, induced by the electric field of the impurity, is a dominant in the case of two subband occupy. In all regions the behavior of the interaction quantum correction is in good agreement with the modern theoretical predictions.