Published January 2012
| Version v1
Journal article
Influence of thermo cyclic treatments on SiO2-Si interface properties in Al-SiO2-n-Si structures
- 1. National University of Uzbekistan, Tashkent (Uzbekistan)
Description
The influence of thermo cyclic treatments on properties of semiconductor-insulator interface in Al-SiO2-n-Si structures has been studied. A physical model is proposed to explain the decrease of positive charge localized in Si-SiO2 interface by migration of electrically inactive impurity atoms in the field generated by mechanical tensions. (authors)
Additional details
Additional titles
- Original title (Russian)
- Влияние термоциклических обработок на свойства границы раздела SiO
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 14
- Journal Issue
- 1
- Journal Page Range
- p. 20-22
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 44041795
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ATOMS; CHARGE DENSITY; ELECTRIC CONDUCTIVITY; IMPURITIES; INTERFACES; MIGRATION; MOS TRANSISTORS; NICKEL; SEMICONDUCTOR MATERIALS; SILICA; SILICON OXIDES; THERMAL EXPANSION
- Descriptors DEC
- CHALCOGENIDES; ELECTRICAL PROPERTIES; ELEMENTS; EXPANSION; MATERIALS; METALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS; TRANSITION ELEMENTS
Optional Information
- Notes
- 12 refs., 2 figs.