On the electron hall mobility temperature minima in irradiated silicon

The Hall mobility of electrons μH in P-doped silicon single crystals is measured in the temperature range T = 77/300 K in series of samples both before and after irradiation with electrons or protons and thermal treatment. In the low-temperature region, the magnitude of μH significantly decreases with radiation dose. In some cases, one or two minima on the curves μH(T) have been detected. The explanation is given by using the model on the thermal polarization of the pairs of defects produced by irradiation