Published May 1998
| Version v1
Journal article
Characteristic electron energy loss spectra in SiC buried layers formed by C+ implantation into crystalline silicon
Creators
- 1. Beijing Polytechnic Univ. (China). Dept. of Applied Physics
- 2. Department of Electronic Engineering, Chinese Univ. of Hong Kong (China)
- 3. Department of Chemistry, Chinese Univ. of Hong Kong (China)
Description
SiC buried layers were synthesized by a metal vapor vacuum arc ion source, with C+ ions implanted into crystalline Si substrates. According to X-ray photoelectron spectroscopy, the characteristic electron energy loss spectra of the SiC buried layers were studied. It was found that the characteristic electron energy loss spectra depend on the profiles of the carbon content, and correlate well with the order of the buried layers
Additional details
Publishing Information
- Journal Title
- Acta Physica Sinica
- Journal Volume
- 47
- Journal Issue
- 5
- Journal Page Range
- p. 876-880
- ISSN
- 1000-3290
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 29043965
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CARBON; CARBON IONS; CONCENTRATION RATIO; DISTRIBUTION; ENERGY LOSSES; ION IMPLANTATION; MONOCRYSTALS; PHOTOELECTRON SPECTROSCOPY; SILICON; SILICON CARBIDES; SPECTRA; X-RAY SPECTROSCOPY
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CRYSTALS; ELECTRON SPECTROSCOPY; ELEMENTS; IONS; NONMETALS; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY