Nonlinear sheath motion and stochastic heating in a capacitive RF discharge
Description
Low pressure (<100 mTorr) capacitive r.f. discharges are widely used in the electronics industry. It has been shown that stochastic heating by the oscillating sheaths is a major energy deposition mechanism. An analytical model of the sheath motion predicts that the heating rate is sensitively dependent on the detailed shape of the non-sinusoidal sheath motion. An experimental procedure has been developed for detrermining this sheath motion. A high frequency response, Langmuir probe measures the sheath potential throughout the sheath region, as a function of position and time. The probe-discharge system can be modeled as a non-linear capacitive voltage divider. Incorporating the non-linear sheath motion into this circuit model yields a set of equations that are solved numerically, and the resulting waveforms are compared with the experimental observations both in magnitude and harmonic content. The parameters describing the sheath motion can then be varied to match the experimentally observed potential. The results indicate good agreement between the theoretically predicted and experimentally observed sheath motion. The differences between the theory and experiment are discussed
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- 1990 IEEE international conference on plasma science-Conference Record-Abstracts
- Imprint Pagination
- 231 p.
- Journal Page Range
- p. 184.
Conference
- Title
- 17. IEEE international conference on plasma science (ICOPS 17).
- Dates
- 21-23 May 1990.
- Place
- Oakland, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22057384
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CAPACITANCE; CORRELATIONS; HEATING; HIGH-FREQUENCY DISCHARGES; ION IMPLANTATION; LANGMUIR PROBE; NONLINEAR PROBLEMS; PLASMA SHEATH; PRESSURE DEPENDENCE; STOCHASTIC PROCESSES
- Descriptors DEC
- ELECTRIC DISCHARGES; ELECTRIC PROBES; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; PROBES
Optional Information
- Secondary number(s)
- CONF-900585--.