Published July 1994 | Version v1
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Determination of trace elements in a silicon single crystal

  • 1. Kyoto Univ., Kumatori, Osaka (Japan). Research Reactor Inst.

Description

Neutron activation analysis was applied to the determination of trace impurity elements in a silicon ingot. Detection limits of 36 elements were calculated semi-empirically and compared with minimum concentrations detected in a silicon single crystal. The sources of the impurities were estimated from elemental concentrations detected in polycrystalline silicon and a quartz crucible. Segregation coefficients were determined from the concentration curves in a single crystal and discussed by comparing with reported values. (author)

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Part of:
Proceeding of symposium on the fundamental knowledge and application of neutron activation analysis by a reactor

Additional details

Publishing Information

Imprint Title
Proceeding of symposium on the fundamental knowledge and application of neutron activation analysis by a reactor
Imprint Pagination
318 p.
Journal Page Range
p. 61-73.
Report number
KURRI-TR--393

Conference

Title
Symposium on the fundamental knowledge and application of neutron activation analysis by a reactor.
Dates
21-22 Dec 1992; 9 Nov 1993; 15-16 Feb 1994.
Place
Kumatori, Osaka (Japan).

Optional Information