Published May 15, 2009 | Version v1
Journal article

CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

  • 1. INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania)
  • 2. Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland)
  • 3. University of Craiova, Faculty of Physics, 13 A.I. Cuza St., Craiova RO-200585, Dolj (Romania)
  • 4. INOE 2000 - National Institute for Optoelectronics, 1 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania)

Description

Thin films of [Cd{SSi(O-But)3}(S2CNEt2)]2, precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2009.02.062

Additional details

Identifiers

DOI
10.1016/j.apsusc.2009.02.062;
PII
S0169-4332(09)00223-2;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
255
Journal Issue
15
Journal Page Range
p. 6786-6789
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.