Published February 2012 | Version v1
Journal article Metadata-only

Electroresistance effect in gold thin film induced by ionic-liquid-gated electric double layer

Creators

  • 1. Tohoku Univ., Institute for Materials Research, Sendai, Miyagi (Japan)
  • 2. Tokyo Univ., Department of Applied Physics, Tokyo (Japan)

Description

Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MV cm-1 of electric field by applying only 1.7 V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems. (author)

Availability note (English)

Available from http://dx.doi.org/10.1143/APEX.5.023002

Additional details

Identifiers

DOI
10.1143/APEX.5.023002;

Publishing Information

Journal Title
Applied Physics Express
Journal Volume
5
Journal Issue
2
Journal Page Range
p. 023002.1-023002.3
ISSN
1882-0778

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
44024103
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; GOLD; LAYERS; MODULATION; MOLTEN SALTS; PLATINUM; SURFACE PROPERTIES; THIN FILMS; TRANSISTORS
Descriptors DEC
ELECTRICAL PROPERTIES; ELEMENTS; FILMS; METALS; PHYSICAL PROPERTIES; PLATINUM METALS; SALTS; SEMICONDUCTOR DEVICES; TRANSITION ELEMENTS

Optional Information

Notes
46 refs., 3 figs.