Published July 1973 | Version v1
Journal article Metadata-only

Long-time processes in the photocurrent kinetics in n-Si irradiated with 660 MeV protons

Creators

  • 1. AN SSSR, Leningrad. Inst. Yadernoj Fiziki

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Долговременные процессы в кинетике фототока n-Si, облученного протонами с энергией 660 МэВ

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
7
Journal Issue
7
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
1429-1431

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
5109595
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; IRRADIATION; MEDIUM TEMPERATURE; MEV RANGE 100-1000; N-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; PROTONS; SILICON; VISIBLE RADIATION
Descriptors DEC
BARYONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; MEV RANGE; NUCLEONS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information

Notes
Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.