Published May 10, 1986 | Version v1
Journal article Metadata-only

Configurational-bistable defects in silicon

Creators

  • 1. Belorusskij Gosudarstvennyj Univ., Minsk. Inst. Prikladnykh Fizicheskikh Problem

Description

Defects with two different structural configurations in isoelectron state are observed in silicon. Defect properties and parameters of configurational reconstruction are determined

Additional details

Additional titles

Original title (Russian)
Конфигурационно-бистабильные дефекты в кремнии

Publishing Information

Journal Title
Pis'ma Zh. Ehksp. Teor. Fiz.
Journal Volume
43
Journal Issue
9
Series
Pis'ma Zh. Ehksp. Teor. Fiz.
Journal Page Range
423-425
ISSN
0370-274X
CODEN
PZETA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
18011101
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACTIVATION ENERGY; CRYSTAL DEFECTS; ENERGY GAP; GAMMA RADIATION; PHYSICAL RADIATION EFFECTS; SILICON
Descriptors DEC
CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY; IONIZING RADIATIONS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS

Optional Information

Notes
For English translation see the journal JETP Letters (USA).