Published March 7, 2008
| Version v1
Journal article
In-plane anisotropy formation of Co thin film induced by FeMn covering layer
- 1. Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou 730000 (China)
Description
A Co (40 nm) thin film and a Co (40 nm)/Fe50Mn50(15 nm) bilayer are fabricated by radio frequency magnetron sputtering on a Si substrate. It is found that the Fe50Mn50 covering layer results in a decrease in the coercivity of the Co thin film. After high-vacuum magnetic heat treatments at 240 and 300 deg. C, a significant uniaxial anisotropy is induced only in the bilayer. A resonance peak at 3 GHz of the annealed bilayer is found in the permeability spectrum. The temperature dependence of magnetic hysteresis loops shows that the uniaxial anisotropy is related to the exchange coupling between the ferromagnet and the antiferromagnet layer
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/41/5/055002Additional details
Identifiers
- DOI
- 10.1088/0022-3727/41/5/055002;
- PII
- S0022-3727(08)57588-7;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 41
- Journal Issue
- 5
- Journal Page Range
- [4 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40060944
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; ANNEALING; ANTIFERROMAGNETIC MATERIALS; COBALT; COERCIVE FORCE; GHZ RANGE 01-100; HYSTERESIS; IRON ALLOYS; LAYERS; MANGANESE ALLOYS; NANOSTRUCTURES; PERMEABILITY; RADIOWAVE RADIATION; SPUTTERING; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
- Descriptors DEC
- ALLOYS; ELECTROMAGNETIC RADIATION; ELEMENTS; FILMS; FREQUENCY RANGE; GHZ RANGE; HEAT TREATMENTS; MAGNETIC MATERIALS; MATERIALS; METALS; PHYSICAL PROPERTIES; RADIATIONS; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS