Published March 1997
| Version v1
Report
Proton irradiation effects in silicon devices
Description
Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x109 cm-2 to 5x1011 cm-2. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 μm CCD-CMOS technology are shown to be quite resistant to 59 MeV H+ irradiations, irrespective of the substrate type. (author)
Additional details
Publishing Information
- Imprint Title
- Recent progress in accelerator beam application. Proceedings of the 7th international symposium on advanced nuclear energy research
- Imprint Pagination
- 553 p.
- Journal Page Range
- p. 224-229.
- Report number
- JAERI-Conf--97-003
Conference
- Title
- 7. international symposium on advanced nuclear energy research.
- Dates
- 18-20 Mar 1996.
- Place
- Takasaki, Gunma (Japan).
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 29000683
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE-COUPLED DEVICES; MEV RANGE 01-10; MOS TRANSISTORS; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION HARDENING; SILICON DIODES
- Descriptors DEC
- BEAMS; ENERGY RANGE; HARDENING; MEV RANGE; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS