Method to manufacture a detector with spatial resolution

This detector is manufactured on a thin layer of high resistance n-type semiconductor. On the top side, interspaced electrode strips are created by diffusion of a p-type doping agent (e.g. B). These electrodes are covered with a layer of Al, their p-n junctions however being covered with a layer of oxide, running between the electrode strips. On the other side of the layer, at right angles to the first electrodes, is a series of electrode strips (n+ conducting) alternating with oxide strips. Operating voltages as low as 1 Volt are possible. (HP)