Published December 2002 | Version v1
Journal article

Efficient light emission from crystalline and amorphous silicon nanostructures

Description

Optical and electronic properties of crystalline silicon (c-Si) and amorphous silicon (a-Si) nanostructures are reviewed. The photoluminescence (PL) peak energies of c-Si and a-Si nanostructures are blueshifted from those of bulk c-Si and a-Si. The temperature dependence of the PL intensity is drastically improved in c-Si and a-Si nanostructures, and efficient luminescence from c-Si and a-Si nanostructures is observed at room temperature. The quantum confinement, spatial confinement, and surface effects on luminescence properties are summarized and the PL mechanism of silicon nanostructures is discussed

Additional details

Identifiers

PII
S0022231302004258;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
100
Journal Issue
1-4
Journal Page Range
p. 209-217
ISSN
0022-2313
CODEN
JLUMA8

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37046030
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CONFINEMENT; EXCITONS; NANOSTRUCTURES; PHOTOLUMINESCENCE; SILICON; TEMPERATURE DEPENDENCE
Descriptors DEC
ELEMENTS; EMISSION; LUMINESCENCE; PHOTON EMISSION; QUASI PARTICLES; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.