Published June 25, 2012 | Version v1
Journal article

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

  • 1. Department of Engineering Sciences and Mechanics, Penn State University, University Park, Pennsylvania 16802 (United States)
  • 2. Department of Electrical Engineering, Penn State University, University Park, Pennsylvania 16802 (United States)
  • 3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
  • 4. Materials Research Institute, Penn State University, University Park, Pennsylvania 16802 (United States)

Description

Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ·cm to 0.6 Ω·cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
100
Journal Issue
26
Journal Page Range
p. 262108-262108.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2012 American Institute of Physics