Published 1973 | Version v1
Book

The role of defects in diffusion

  • 1. Plessey Co. Ltd., Towcester (UK). Allen Clark Research Centre

Description

no abstract available

Additional details

Publishing Information

Publisher
Institute of Physics.
Imprint Place
London
ISBN
0854981063
Imprint Title
Radiation damage and defects in semiconductors
Imprint Pagination
p. 170-181.
Journal Issue
no. 16
Series
Conference series.

Conference

Title
International conference on radiation damage and defects in semiconductors.
Dates
19 Jul 1972.
Place
Reading, UK.

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
4065310
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CARRIER MOBILITY; CRYSTAL DEFECTS; HIGH TEMPERATURE; IMPURITIES; IRRADIATION; KINETICS; LOW TEMPERATURE; RADIATION EFFECTS; SELF-DIFFUSION; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
CRYSTAL STRUCTURE; DIFFUSION; ELEMENTS; HEAT TREATMENTS; MOBILITY; SEMIMETALS