A comparison between semi-spheroid- and dome-shaped quantum dots coupled to wetting layer
- 1. Physics Department, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz, 61357-43135 (Iran, Islamic Republic of)
Description
During the epitaxial growth method, self-assembled semi-spheroid-shaped quantum dots (QDs) are formed on the wetting layer (WL). However for sake of simplicity, researchers sometimes assume semi-spheroid-shaped QDs to be dome-shaped (hemisphere). In this work, a detailed and comprehensive study on the difference between electronic and transition properties of dome- and semi-spheroid-shaped quantum dots is presented. We will explain why the P-to-S intersubband transition behaves the way it does. The calculated results for intersubband P-to-S transition properties of quantum dots show two different trends for dome-shaped and semi-spheroid-shaped quantum dots. The results are interpreted using the probability of finding electron inside the dome/spheroid region, with emphasis on the effects of wetting layer. It is shown that dome-shaped and semi-spheroid-shaped quantum dots feature different electronic and transition properties, arising from the difference in lateral dimensions between dome- and semi-spheroid-shaped QDs. Moreover, an analogy is presented between the bound S-states in the quantum dots and a simple 3D quantum mechanical particle in a box, and effective sizes are calculated. The results of this work will benefit researchers to present more realistic models of coupled QD/WL systems and explain their properties more precisely
Additional details
Identifiers
- DOI
- 10.1063/1.4885135;
Publishing Information
- Journal Title
- AIP Advances
- Journal Volume
- 4
- Journal Issue
- 6
- Journal Page Range
- p. 067134-067134.16
- ISSN
- 2158-3226
- CODEN
- AAIDBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46006035
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; EPITAXY; LAYERS; PARTICLES; PROBABILITY; QUANTUM DOTS; QUANTUM MECHANICS; SPHEROIDS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; EVALUATION; MECHANICS; NANOSTRUCTURES
Optional Information
- Notes
- (c) 2014 Author(s)