Published December 1, 2004 | Version v1
Journal article

Dielectric properties of barium titanate ceramics doped by B2O3 vapor

  • 1. Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)
  • 2. Department of Applied Physics and Materials Research Center, Hong Kong Polytechnic University, Hong Kong (China)

Description

The effects of B2O3 vapor doping on the dielectric properties of barium titanate ceramics were studied. After the doping, the Curie point of BaTiO3 ceramics was increased from 128 deg. C to 130 deg. C and the maximum dielectric constant was considerably increased. X-ray diffraction showed that both the grain lattice parameters and the tetragonality were increased by the boron oxide vapor doping. It was proposed that boron interstitial was introduced into the grain lattice of barium titanate ceramics by B2O3 vapor doping and the dielectric properties were thus obviously changed

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
96
Journal Issue
11
Journal Page Range
p. 6937-6939
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
(c) 2004 American Institute of Physics