Published 1990
| Version v1
Miscellaneous
TaSi2 formation during low energy pulsed ion implantation of silicon
Description
Short note
Additional details
Additional titles
- Original title (Russian)
- Формирование TaSi
Publishing Information
- Imprint Title
- Theses of reports of the 20. All-union conference on physics of charged particles interaction with crystals
- Imprint Pagination
- 170 p.
- Journal Page Range
- p. 102.
- Report number
- INIS-SU--220
Conference
- Title
- 20. All-union conference on physics of charged particles interaction with crystals.
- Dates
- 28-30 May 1990.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22020417
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; HIGH TEMPERATURE; ION IMPLANTATION; KEV RANGE 01-10; PULSED IRRADIATION; RADIATION DOSES; SILICON; TANTALUM IONS; TANTALUM SILICIDES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; IRRADIATION; KEV RANGE; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- Imprint:Tezisy dokladov 20. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.