Published August 2009
| Version v1
Journal article
Efficiency improvement of single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process
Creators
- 1. Millennium Communication Co., Ltd, Hsinchu Industrial Park, 303, Taiwan (China)
- 2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, 300, Taiwan (China)
Description
In this study, single-junction InGaP solar cells fabricated by a novel micro-hole array surface texture process are presented. The characteristics of the single-junction InGaP solar cells with and without the micro-hole array surface texture are studied. An increase of 10.4% in short-circuit current is found when a single-junction InGaP solar cell is fabricated by the micro-hole array surface texture process. The conversion efficiency measured under one-sun air mass 1.5 global illumination at room temperature can also be improved from 13.8% to 15.9% when the size of the micro-holes is 5.3 µm and the period of micro-hole array is designed to 5 µm
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/24/8/085007Additional details
Identifiers
- DOI
- 10.1088/0268-1242/24/8/085007;
- PII
- S0268-1242(09)16699-3;
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 24
- Journal Issue
- 8
- Journal Page Range
- [4 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45011057
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EFFICIENCY; ELECTRICAL FAULTS; GALLIUM PHOSPHIDE SOLAR CELLS; INDIUM PHOSPHIDE SOLAR CELLS; SEMICONDUCTOR MATERIALS; SURFACES; TEXTURE
- Descriptors DEC
- DIRECT ENERGY CONVERTERS; EQUIPMENT; MATERIALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR CELLS; SOLAR EQUIPMENT