Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO2 and muscovite substrates
- 1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
- 2. Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
- 3. Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 and Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)
Description
Thin films of Cobalt(II) Phthalocyanine (CoPc) were grown by thermal evaporation technique on two different substrates namely SiO2 and atomically cleaned muscovite mica(001) at various substrate temperatures. Deposition rate has been maintained to 0.3Å/sec during the growth of the films. The growth process is studied by means of atomic force microscopy (AFM). Films on SiO2 exhibit only three-dimensional islands and uniformity of these islands improved with substrate temperatures, whereas films on mica (001) consist of long oriented percolated structures. The results revealed that the growth mechanism of CoPc strongly depends on substrate temperatures as well as nature of substrate used. Optical properties were characterized by UV-Visible spectroscopy and structural properties were studied using X-ray diffraction
Additional details
Identifiers
- DOI
- 10.1063/1.4862007;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1576
- Journal Issue
- 1
- Journal Page Range
- p. 152-154
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 2. international conference on optoelectronic materials and thin films for advanced technology
- Acronym
- OMTAT 2013
- Dates
- 3-5 Jan 2013
- Place
- Kochi, Kerala (India)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45085235
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; COBALT; DEPOSITION; MUSCOVITE; OPTICAL PROPERTIES; PHTHALOCYANINES; SILICA; SILICON OXIDES; SPECTROSCOPY; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; DYES; ELEMENTS; FILMS; HETEROCYCLIC COMPOUNDS; METALS; MICA; MICROSCOPY; MINERALS; ORGANIC COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; SILICATE MINERALS; SILICON COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC