Surface processes on plasmochemical deposition of A2B6 semiconducting films

The development of complex model of plasma-induced deposition from organometallic compounds of qualitative layers of CdTe, HgTe and GdxHg1-xTe was continued. The model permits explaining experimental temperature dependences of the layers growth rate and composition and tracing appearance of the non-random regularity in filling cationic sublattice with Cd and Hg atoms as a consequence of certain surface-kinetic properties of adatoms. The concrete type of stable nucleus on the surface and important role of chemical desorption at moderate growth temperatures are made allowance for. 19 refs.; 6 figs.; 1 tab