Frequency and Voltage Dependent Series resistance Profile in Au/n-CdTe Solar Cells

The electrical properties of the metal-semiconductor (Au/n-CdTe) Schottky barrier diyodes (SBDs) with a series resistance (Rs) have been investigated by using frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements at room temperature. The frequency and voltage dependent distribution profile of Rs and Nss were obtained by using admittance spectroscopy and and Hill-Coleman methods, respectively. The values of C, G/w and Rs decrease with increasing frequency. The forward bias C-V plots exhibit anomalous peaks due to the particular distribution of interface states (Nss) and Rs effect. Also, the calculated C-2-V plots exhibit a minimum at a specific value of the dc bias voltage especially at high frequencies due to the effect of Rs on C and G/w are found appreciable at higher frequencies. Experimental results show that both the magnitude of Rs and Nss are important parameters that strongly influence the electrical characteristics especially at low frequencies in Au/n-CdTe solar cells