The Influence of Ta underlayers on the structure of TiO2 thin films deposited on an unheated glass substrate
Creators
- 1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
- 2. Department of Material Science, Shibaura Institute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo 135-8548 (Japan)
- 3. Department of Electronic Materials Engineering, Kwangwoon University, 447-1 Wolgye-Dong, Nowon-Gu, Seoul 139-701 (Korea, Republic of)
Description
Highlights: ► Anatase TiO2 films were successfully obtained on unheated glass substrates. ► Crystallization of TiO2 thin films using Ta underlayers. ► Ti seed layer effect on the Ta underlayer crystallization. ► Anatase TiO2 films were also obtained on Ta/Ti underlayers without annealing. - Abstract: The influence of Ta underlayers on the structures of TiO2 thin films grown onto unheated glass substrates by radio frequency magnetron sputtering has been studied and compared. The crystal, electronic, and surface structures of fabricated TiO2 films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. The X-ray diffraction results and valence band spectra by X-ray photoelectron spectroscopy revealed that the fabricated TiO2 films on the unheated glass substrate with a highly crystallized β-Ta underlayer showed an anatase structure, whereas the TiO2 film grown directly onto glass or onto a poorly crystallized Ta film showed an amorphous one. The results showed that the crystallized anatase TiO2 films were successfully obtained on glass substrates using the Ta underlayers without substrate heating and additional annealing.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2012.05.088Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2012.05.088;
- PII
- S0169-4332(12)00947-6;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 258
- Journal Issue
- 22
- Journal Page Range
- p. 8764-8768
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44108605
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; COMPARATIVE EVALUATIONS; CRYSTALLIZATION; CRYSTALS; DEPOSITS; GLASS; HEATING; LAYERS; MAGNETRONS; RADIOWAVE RADIATION; SPECTRA; SPUTTERING; SUBSTRATES; TANTALUM; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; EVALUATION; FILMS; HEAT TREATMENTS; METALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; RADIATIONS; REFRACTORY METALS; SCATTERING; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.