Published October 15, 2004 | Version v1
Journal article

Structure of the Si(1 1 3) surface studied by surface X-ray diffraction

Description

We carried out a grazing incidence X-ray diffraction analysis of the Si(1 1 3) 3 x 1 surface using synchrotron radiation. We compared the experimental structure factors obtained from the integrated intensities of the fractional-order reflections with the calculated structure factors of the dimerized structure model of Ranke. By minimizing the R-factor, we determined the position and the size of the pentagon in the 3 x 1 dimerized structure model of Ranke. In addition, we found that a model with randomly distributed interstitial atoms at the center of the pentagon gives a smaller R-factor value

Additional details

Identifiers

DOI
10.1016/j.apsusc.2004.06.031;
PII
S0169433204009766;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
237
Journal Issue
1-4
Journal Page Range
p. 40-44
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
7. international symposium on atomically controlled surfaces, interfaces and nanostructures
Dates
16-20 Nov 2003
Place
Nara (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37096841
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
PHASE TRANSFORMATIONS; R FACTORS; REFLECTION; SILICON; STRUCTURE FACTORS; SURFACES; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
Descriptors DEC
BREMSSTRAHLUNG; COHERENT SCATTERING; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTROMAGNETIC RADIATION; ELEMENTS; RADIATIONS; SCATTERING; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.