Stoichiometry variation for the atomic layer deposition of SrxTiyOz from Sr(iPr3Cp)2, Ti[N(CH3)2]4 and H2O
Creators
- 1. Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Straße 23, 09599 Freiberg (Germany)
- 2. Institute for Solid State Physics, Friedrich-Schiller-Universität Jena, Helmholzweg 3, 07743 Jena (Germany)
- 3. Helmholz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01314 Dresden (Germany)
Description
The atomic layer deposition (ALD) of stoichiometric SrTiO3 as well as layers with either Sr or Ti excess from the commercial precursors Bis(tri-isopropylcyclopentadienyl)-strontium Sr(iPr3Cp)2, Tetrakis-(dimethylamido)titanium(IV) Ti[N(CH3)2]4 and H2O on a commercial ALD system is demonstrated. The influence of the stoichiometry on the optical layer properties was investigated. Spectroscopic ellipsometry shows that all SrxTiyOz layers are transparent up to the optical gap energy, which amounts to 3.87 eV for stoichiometric SrTiO3. A direct correlation between the Sr content, optical properties, layer density and the growth per cycle value was determined. X-ray photoelectron spectroscopy after Ar ion cluster sputtering indicates that the layers are free of carbon. After ex situ annealing under atmospheric conditions we observed a change in microstructure from amorphous to polycrystalline starting at 545 °C by atomic force microscopy and grazing incidence X-ray diffraction. Electrical I–V measurements show very small leakage currents confirming the insulating character of the SrxTiyOz layers. - Highlights: • SrxTiyOz layers were grown from commercial precursors at a commercial ALD device. • Stoichiometric as well as layers with Sr or Ti excess can be deposited. • At a deposition temperature of 320 °C the layers are free of carbon. • A direct correlation between Sr content, optical properties and GPC was determined. • Ex situ annealing at 600 °C yields completely crystallized SrTiO3 layers
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2015.01.053Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2015.01.053;
- PII
- S0040-6090(15)00097-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 577
- Journal Page Range
- p. 134-142
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47033172
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ARGON IONS; ATOMIC FORCE MICROSCOPY; CORRELATIONS; DENSITY; DEPOSITION; ELLIPSOMETRY; LAYERS; LEAKAGE CURRENT; OPTICAL PROPERTIES; POLYCRYSTALS; SPUTTERING; STOICHIOMETRY; STRONTIUM COMPLEXES; STRONTIUM TITANATES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ALKALINE EARTH METAL COMPLEXES; ALKALINE EARTH METAL COMPOUNDS; CHARGED PARTICLES; COHERENT SCATTERING; COMPLEXES; CRYSTALS; CURRENTS; DIFFRACTION; ELECTRIC CURRENTS; ELECTRON SPECTROSCOPY; HEAT TREATMENTS; IONS; MEASURING METHODS; MICROSCOPY; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SCATTERING; SPECTROSCOPY; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.