Published April 1986 | Version v1
Journal article Metadata-only

Electrical properties of MOS radiation dosimeters

Creators

  • 1. C.N.R.S., 31 - Toulouse (France). Laboratoire d'Automatique et d'Analyse des Systemes

Description

MOS transistors are used for radiation dosimetry. The sensitivity obtained is ranging between 20 mV/Gray(SiO2) and 1.5 V/Gray(SiO2). Good linearity and stability of the transistor response is obtained

Additional details

Publishing Information

Journal Title
Rev. Phys. Appl.
Journal Volume
21
Journal Issue
4
Series
Rev. Phys. Appl.
Journal Page Range
283-287
ISSN
0035-1687
CODEN
RPHAA

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
17062926
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
DOSEMETERS; GAMMA RADIATION; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; SENSITIVITY; STABILITY; X RADIATION
Descriptors DEC
ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; MEASURING INSTRUMENTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS