Published February 2000 | Version v1
Journal article

Electrical properties of transmutation-doped indium phosphide

  • 1. Karpov Institute of Physical Chemistry (Obninsk Branch), Obninsk, Kaluga oblast, 249020 (Russian Federation)
  • 2. Institute of Nuclear-Power Engineering, Obninsk, Kaluga oblast, 249020 (Russian Federation)

Description

Experimental results of studying the process of transmutation doping of InP single crystals by irradiating with nuclear-reactor neutrons are reported; the possibility of doping with tin in a wide range of concentrations and obtaining the concentration of free electrons as high as 2 x 1019 cm-3 is demonstrated. Electrical properties of InP and their behavior under irradiation and in the course of subsequent heat treatments were studied. The prospects for utilization of the nuclear-transmutation method for doping are assessed

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
34
Journal Issue
2
Journal Page Range
p. 150-154
ISSN
1063-7826
CODEN
SMICES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 157-161 (No. 2, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.