Structure of the E4 and E5 peaks of n-type GaAs

Samples of n-type GaAs were irradiated at room temperature with gamma rays and electrons. They exhibited for the first time the P2 and P3 radiation centers after high-temperature annealing. When the energy of the bombarding electrons exceeded 1 MeV, the main contribution to the recorded DLTS signal above 250 K was made by the E4 and P3 centers and an increase in the electron energy increased their contribution to the overall spectrum. Moreover, the rates of introduction of these E4 and P3 centers, and also possibly of the P2 centers, depended on the irradiation temperature. This property and the more effective rise of the rates of introduction of the P2, P3, and E4 centers (compared with E5), observed on increase in the energy of the bombarding particles, indicated that these centers were complexes