Published 2016 | Version v1
Journal article

Capturing Structural Dynamics in Crystalline Silicon Using Chirped Electrons from a Laser Wakefield Accelerator

  • 1. University of Michigan, Ann Arbor, MI (United States). Center for Ultrafast Optical Science
  • 2. University Paris-Saclay, Gif-sur-Yvette (France)
  • 3. Ecole Polytechnique, Palaiseau (France). Le Laboratoire d'Optique Appliquee (LOA)

Description

Recent progress in laser wakefield acceleration has led to the emergence of a new generation of electron and X-ray sources that may have enormous benefits for ultrafast science. These novel sources promise to become indispensable tools for the investigation of structural dynamics on the femtosecond time scale, with spatial resolution on the atomic scale. Here in this paper, we demonstrate the use of laser-wakefield-accelerated electron bunches for time-resolved electron diffraction measurements of the structural dynamics of single-crystal silicon nano-membranes pumped by an ultrafast laser pulse. In our proof-of-concept study, we resolve the silicon lattice dynamics on a picosecond time scale by deflecting the momentum-time correlated electrons in the diffraction peaks with a static magnetic field to obtain the time-dependent diffraction efficiency. Further improvements may lead to femtosecond temporal resolution, with negligible pump-probe jitter being possible with future laser-wakefield-accelerator ultrafast-electron-diffraction schemes.

Availability note (English)

Available from https://www.osti.gov/pages/servlets/purl/1426167; https://www.osti.gov/pages/biblio/1426167; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo period

Additional details

Publishing Information

Journal Title
Scientific Reports
Journal Volume
6
Journal Issue
1
Journal Page Range
vp.
ISSN
2045-2322