Published 2004
| Version v1
Book
Interaction of radiating defects with impurity atoms in silicon
Description
In the given work the results of measurement DLTS in diodes from the silicon alloyed by zinc at T=1050 deg. C before and after irradiation by γ-quanta are given. It is established, that parameters of levels of zinc practically do not change as a result of γ-irradiated atoms of zinc does not form complexes with radiation defects appreciable concentration. Electrical active centres of zinc under influence of γ-irradiation even with a small speed, are broken up
Additional details
Additional titles
- Original title (English)
- Tezisy 8.Mezhdunarodnoj konferentsii 'Fizika Tverdogo Tela'
Publishing Information
- Publisher
- Inst. Yadernoj Fiziki Natsional'nogo Yadernogoj Tsentra Respubliki Kazakhstan
- Imprint Place
- Almaty (Kazakhstan)
- ISBN
- 9965-675-16-3
- Imprint Title
- Abstracts of 8. International conference 'Solid State Physics'
- Imprint Pagination
- 473 p.
- Journal Page Range
- p. 174-176
Conference
- Title
- 8. International conference 'Solid State Physics'
- Original Conference Title
- 8. Mezhdunarodnaya konferentsiya 'Fizika Tverdogo Tela'
- Dates
- 23-26 Aug 2004
- Place
- Almaty (Kazakhstan)
INIS
- Country of Publication
- Kazakhstan
- Country of Input or Organization
- Kazakhstan
- INIS RN
- 36084084
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; METALLURGICAL EFFECTS; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE RANGE 1000-4000 K; ZINC
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTS; METALS; RADIATION EFFECTS; SEMIMETALS; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Notes
- Imprint:Tezisy 8.Mezhdunarodnoj konferentsii 'Fizika Tverdogo Tela'