Controlled tungsten doping of vanadium dioxide grown through alternating-target pulsed laser deposition

Thin films of vanadium dioxide were grown with various fractions of tungsten doping controlled during growth through alternating-target pulsed laser deposition. A range of V_1−xW_xO₂ films were grown on (0001) sapphire substrates with x values on intervals from x = [0, 0.025]. The metal-insulator transition temperature was measured through the change in infrared transmission, and the change in transition temperature as a function of the dopant-fraction x was found to be −18.89 °C per atomic percent tungsten, consistent with studies using various other forms of growth. (paper)