Published February 2008 | Version v1
Journal article

Ion velocity dependent secondary electron induced point defects in SHI irradiated solids

  • 1. Dept. of Physics, Utkal Univ., Bhubaneswar (India)
  • 2. Tata Institute of Fundamental Research, Mumbai (IN)
  • 3. National Institute of Technology, Rourkela (IN)
  • 4. Dept. of Physics, North Orissa Univ., Baripada (IN)
  • 5. Inter University Accelerator Centre, New Delhi (IN)

Description

Swift Heavy Ion (SHI) mostly dissipates its energy in electron excitations rather than nuclear collisions inside a target material. It is known that about half of the energy deposited into the electron excitation contributes to track formation; the remaining energy is transported far away by the energetic secondary electrons. A certain fraction of the secondary electrons are finally ejected from the surface. We report the effect of the remaining fraction left behind in the target in modifying the target properties. We show that the energy of these secondary electrons is too low to induce defects by elastic scattering process. We therefore consider the inelastic interaction of the low energy electrons in YBa2Cu3O7-y (YBCO). As a consequence, the secondary electrons induce dissociative recombination in YBCO by breaking some of the Cu-O bonds. We estimate the maximum energy of the emanated secondary electrons from the ion tracks and their corresponding ranges in YBCO for different initial ion energies. In contrast to the velocity effect that leads to smaller diameter tracks for ions with higher energies, we show that the diameter of the defected zone due to ion induced secondary electrons increases with increasing energy of the ion. (author)

Additional details

Publishing Information

Journal Title
Indian Journal of Physics and Proceedings of the Indian Association for the Cultivation of Science
Journal Volume
82
Journal Issue
2
Journal Page Range
p. 147-154
CODEN
IJPYAS

Optional Information

Notes
17 refs., 3 figs.