The current endash voltage characteristics of the resistive direct current superconducting quantum interference device
Creators
- 1. Physikalisch-Technische Bundesanstalt, Abbestrasse 10-12, D-10587 Berlin (Germany)
Description
Partly resistive superconducting quantum interference devices (RSQUIDs) are used in noise thermometry in the liquid helium temperature range. Here we analyze one type of RSQUID that has not been thoroughly investigated until now: the direct current biased with two Josephson junctions and a resistive part connected in series with the junctions and closed by a superconducting ring. The resistive shunted model of the Josephson junctions is used for the analysis. Two cases of the RSQUID ring inductance were analyzed: (i) negligibly small and (ii) small but finite inductance. The expressions for the low frequency output signal, the current endash voltage (I endash V) characteristics, and the current flowing through the resistive part are obtained. In the dependence of the output frequency versus the dc current passed through the resistive part often an offset is observed experimentally. This phenomenon can be explained as an influence of an asymmetry in the critical currents of the junctions. copyright 1997 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 81
- Journal Issue
- 4
- Journal Page Range
- p. 2010-2020.
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28040411
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CRITICAL CURRENT; ELECTRIC CURRENTS; FREQUENCY DEPENDENCE; INDUCTANCE; JOSEPHSON JUNCTIONS; RINGS; SQUID DEVICES; TEMPERATURE MEASUREMENT
- Descriptors DEC
- CURRENTS; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; EQUIPMENT; FLUXMETERS; MEASURING INSTRUMENTS; MICROWAVE EQUIPMENT; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTING DEVICES