Published September 2009 | Version v1
Journal article Metadata-only

On low temperature diffusion in manganese-silicon system

Creators

  • 1. Urgench state university, Urgench (Uzbekistan)

Description

The diffusion processes are investigated in binary manganese-silicon system. A possibility of appreciable manganese diffusion in system manganese-silicon at enough low temperatures is shown. (author)

Additional details

Additional titles

Original title (Russian)
К низкотемпературной диффузии в системе кремний-марганец

Publishing Information

Journal Title
Uzbekiston Fizika Zhurnali
Journal Volume
11
Journal Issue
5-6
Journal Page Range
p. 367-370
ISSN
1025-8817

INIS

Country of Publication
Uzbekistan
Country of Input or Organization
Uzbekistan
INIS RN
41099899
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALPHA PARTICLES; BACKSCATTERING; DIFFUSION; ELASTIC SCATTERING; ENERGY SPECTRA; HELIUM IONS; MANGANESE; SILICON; TEMPERATURE RANGE 0065-0273 K
Descriptors DEC
CHARGED PARTICLES; ELEMENTS; IONIZING RADIATIONS; IONS; METALS; RADIATIONS; SCATTERING; SEMIMETALS; SPECTRA; TEMPERATURE RANGE; TRANSITION ELEMENTS

Optional Information

Notes
7 refs., 2 figs.