Computational design of patterned interfaces using reduced order models
- 1. MIT Department of Materials Science and Engineering, Cambridge MA, 02139 (United Kingdom)
- 2. CEA, DAM, DIF, F-91297 Arpajon, (France)
Description
Patterning is a familiar approach for imparting novel functionalities to free surfaces. We extend the patterning paradigm to interfaces between crystalline solids. Many interfaces have non-uniform internal structures comprised of misfit dislocations, which in turn govern interface properties. We develop and validate a computational strategy for designing interfaces with controlled misfit dislocation patterns by tailoring interface crystallography and composition. Our approach relies on a novel method for predicting the internal structure of interfaces: rather than obtaining it from resource-intensive atomistic simulations, we compute it using an efficient reduced order model based on anisotropic elasticity theory. Moreover, our strategy incorporates interface synthesis as a constraint on the design process. As an illustration, we apply our approach to the design of interfaces with rapid, 1-D point defect diffusion. Patterned interfaces may be integrated into the microstructure of composite materials, markedly improving performance. (authors)
Availability note (English)
Available from doi: http://dx.doi.org/10.1038/srep06231Additional details
Identifiers
- DOI
- 10.1038/srep06231;
Publishing Information
- Journal Title
- Scientific Reports
- Journal Volume
- 4
- Journal Issue
- no.6231
- Journal Page Range
- p. 1-7
- ISSN
- 2045-2322
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- France
- INIS RN
- 48042154
- Subject category
- S36: MATERIALS SCIENCE; S97: MATHEMATICAL METHODS AND COMPUTING;
- Descriptors DEI
- ANISOTROPY; COMPOSITE MATERIALS; COMPUTERIZED SIMULATION; CRYSTALLOGRAPHY; DIFFUSION; DISLOCATIONS; ELASTICITY; INTERFACES; MICROSTRUCTURE; POINT DEFECTS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS; MATERIALS; MECHANICAL PROPERTIES; SIMULATION
Optional Information
- Notes
- 65 refs.