Luminescence spectroscopy of GaPO4 and AlPO4 crystals with intrinsic and radiation-induced defects
- 1. Ural'skij Gosudarstvennyj Tekhnicheskij Univ., Ekaterinburg (Russian Federation)
- 2. Inst. Ehksperimental'noj Fiziki Gamburgskogo Univ., Gamburg (Germany)
- 3. SO RAN, Inst. Yadernoj Fiziki im. G.I. Budkera, Novosibirsk (Russian Federation)
Description
The time-resolved luminescence spectra in energy region of 2.0-6.0 eV, as well as the excitation spectra (4.0-35 eV), reflectivity and the decay kinetics were studied at T = 10 K and 295 K using selective vacuum ultraviolet excitation and X-ray excitation in GaPO4 and AlPO4 nominally pure crystals as well as crystals with intrinsic defects and radiation defects induced by fast electrons. The forbidden energy gap is estimated Eg ≅ 8.5 eV for GaPO4 and Eg ≅ 9.0-9.2 eV for AlPO4 at T 10 K. The emission band 3.05 eV is excited in energy region of fundamental absorption edge exclusively. This luminescence corresponding to intrinsic emission of crystals. The new emission band (2.12 eV, τ = 7 ns for GaPO4) occurs in irradiated crystals. The energy transfer efficiency of electron excitations to this defects is very low
Abstract (Russian)
Проведено комплексное исследование люминесцентных и оптических свойств кристаллов AlPO4 и GaPO4 (номинально чистых и с радиационно-индуцированными дефектами) при селективном возбуждении синхротронным излучением вакуумного ультрафиолетового и рентгеновского диапазонов. Измерены время-разрешенные спектры люминесценции (СЛ) в области 1.5-6 эВ, время-разрешенные спектры возбуждения (4-35 эВ), кинетика затухания и спектры отражения при Т = 8-295 К. Методы время-разрешенной низкотемпературной люминесцентной спектроскопии позволяют уверенно контролировать наличие дефектов роста или неконтролируемых примесей. В СЛ образцов, облученных быстрыми электронами, обнаружена новая полоса, связанная с образованием радиационно-индуцированных дефектовAdditional details
Additional titles
- Original title (Russian)
- Люминесцентная спектроскопия кристаллов GaPO
Publishing Information
- Journal Title
- Poverkhnost'. Rentgenovskie, Sinkhrotronnye i Nejtronnye Issledovaniya
- Journal Issue
- no.11
- Journal Page Range
- p. 77-80
- ISSN
- 1028-0960
Conference
- Title
- 14. Russian conference on application of synchrotron radiation SR-2002
- Original Conference Title
- XIV Rossijskaya konferentsiya po ispol'zovaniyu sinkhrotronnogo izlucheniya SI-2002
- Dates
- 15-19 Jul 2002
- Place
- Novosibirsk (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 36052051
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM PHOSPHATES; CRYSTALS; DEFECTS; EMISSION SPECTRA; EMISSION SPECTROSCOPY; GALLIUM PHOSPHATES; INORGANIC PHOSPHORS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; OXYGEN COMPOUNDS; PHOSPHATES; PHOSPHORS; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATION EFFECTS; SPECTRA; SPECTROSCOPY
Optional Information
- Notes
- 9 refs., 3 figs.