Published August 28, 2013 | Version v1
Journal article

Inter-valley mixing in Si/SiO2 heterostructures

  • 1. Department of Micro- and Nanoelectronics, St. Petersburg State Electrotechnical University, 5 Professora Popova Street, St. Petersburg 197376 (Russian Federation)

Description

We present a theory for heterostructures based on diamond structured semiconductors, with an emphasis of calculating inter-valley coupling. The theory allows taking into account microscopic symmetry of heterointerface within the envelope-function approach. To find out corrections to the effective Hamiltonian we use methods of group theory. We calculated valley-orbit splitting and electron wave functions for SiO2/Si/SiO2 finite square quantum wells. The results are in good agreement with those obtained by other authors

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/461/1/012040

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
461
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1742-6596

Conference

Title
15. Russian youth conference on physics and astronomy
Acronym
PhysicA.SPb
Dates
23-24 Oct 2012
Place
St. Petersburg (Russian Federation)