Published September 2019
| Version v1
Journal article
Variable Range Hopping in a Dilute GaAs/AlGaAs Hole System
Creators
- 1. University Hassan II Casablanca, Laboratory EEA&TI, Faculty of Sciences and Technology Mohammedia (Morocco)
- 2. University IbnZohr, Physics Department, Faculty of Sciences (Morocco)
- 3. University Ibn Tofail, Energetic Engineering and Materials Laboratory, Faculty of Sciences (Morocco)
Description
In this work, we conducted an investigation concerning low-temperature electrical transport phenomena in a two-dimensional (2D) GaAs hole gas. The different carrier densities of the sample locate them on the insulating side of the metal-insulator transition (MIT). Two theoretical models of variable range hopping (VRH) conduction according to Mott (Mott VRH region) and according to Efros-Shklovskii (ES VRH region) are used in the modeling of the experimental measurements obtained by Qiuet et al. [Phys. Rev. Lett. 108, 106404 (2012)].
Additional details
Identifiers
- DOI
- 10.3938/jkps.75.389;
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 75
- Journal Issue
- 5
- Journal Page Range
- p. 389-393
- ISSN
- 0374-4884
- CODEN
- KPSJAS
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54085486
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; CARRIER DENSITY; COMPUTERIZED SIMULATION; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; PHASE TRANSFORMATIONS; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SIMULATION
Optional Information
- Copyright
- Copyright (c) 2019 The Korean Physical Society