Published April 1992 | Version v1
Report Restricted

Charge-sensitive poly-silicon TFT amplifiers for a-Si:H pixel particle detectors

Creators

  • 1. Lawrence Berkeley Lab., CA (United States)
  • 2. Xerox Palo Alto Research Center, CA (United States)

Description

Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec

Availability note (English)

MF available from INIS under the Report Number; OSTI as DE92016915; NTIS; INIS; US Govt. Printing Office Dep.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
7 p.
Report number
LBL--32219

Conference

Title
Material Research Society spring meeting.
Dates
27 Apr - 2 May 1992.
Place
San Francisco, CA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
23083719
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DESIGN; FABRICATION; FREQUENCY DEPENDENCE; RADIATION DETECTORS; SILICON DIODES; THIN FILMS; TRANSISTOR AMPLIFIERS
Descriptors DEC
AMPLIFIERS; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MEASURING INSTRUMENTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Contract/Grant/Project number
Contract AC03-76SF00098
Funding organization
USDOE, Washington, DC (United States).
Secondary number(s)
CONF-920402--41.