Published February 23, 2018 | Version v1
Journal article

Fabrication of nanopores and nanoslits with feature sizes down to 5 nm by wet etching method

  • 1. Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)
  • 2. School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044 (China)

Description

This paper presents an improved three-step wet etching method for the fabrication of single-crystal silicon nanopores and nanoslists. A diffusion model was built to analyze the influence of the color-based feedback mechanism on the final pore size. Reference structures were added aside normal pore patterns, to obtain a more precise control of the pore size during the pore opening process. By using this method, square nanopores with the minimum size of 8 nm × 8 nm, rectangle nanopores and nanoslits with feature sizes down to 5 nm were successfully obtained. Focused ion beam cutting revealed that the nanopore profile keeps well the inverted-pyramid shape, with an included angle of 54.7°. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6528/aaa523

Additional details

Identifiers

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
29
Journal Issue
8
Journal Page Range
[9 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52002604
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
DIFFUSION; ETCHING; ION BEAMS; MONOCRYSTALS; NANOSTRUCTURES
Descriptors DEC
BEAMS; CRYSTALS; SURFACE FINISHING