Published February 23, 2018
| Version v1
Journal article
Fabrication of nanopores and nanoslits with feature sizes down to 5 nm by wet etching method
Creators
- 1. Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)
- 2. School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing 100044 (China)
Description
This paper presents an improved three-step wet etching method for the fabrication of single-crystal silicon nanopores and nanoslists. A diffusion model was built to analyze the influence of the color-based feedback mechanism on the final pore size. Reference structures were added aside normal pore patterns, to obtain a more precise control of the pore size during the pore opening process. By using this method, square nanopores with the minimum size of 8 nm × 8 nm, rectangle nanopores and nanoslits with feature sizes down to 5 nm were successfully obtained. Focused ion beam cutting revealed that the nanopore profile keeps well the inverted-pyramid shape, with an included angle of 54.7°. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/aaa523Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 29
- Journal Issue
- 8
- Journal Page Range
- [9 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52002604
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- DIFFUSION; ETCHING; ION BEAMS; MONOCRYSTALS; NANOSTRUCTURES
- Descriptors DEC
- BEAMS; CRYSTALS; SURFACE FINISHING