Published April 1, 2016 | Version v1
Journal article Metadata-only

Stable electrical performance observed in large-scale monolayer WSe2(1−x)S2x with tunable band gap

Creators

  • 1. Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, Synergetic Innovation Center of Quantum Information Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  • 2. Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  • 3. Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 (United States)

Description

Two-dimensional (2D) semiconductor materials have attracted broad interest due to their unique structures and physical properties. The stability of the 2D-material-based devices plays a key role in their practical applications. Here, we report the promising stable electrical performance in the large-scale monolayer WSe2(1−x)S2x with a tunable band gap. Photoluminescence (PL) spectroscopy was utilized to verify the tunable band gap in the as-grown monolayer with a tuning capability of 120 meV. Gated field effect transistor (FET) performance confirmed the p-type transport behavior in monolayer WSe2(1−x)S2x with a high on/off ratio (>104). Top-gated FET configuration improves the carrier mobility with two orders larger than that in the back-gated FET device. After exposure to air for three months, the device performance manifested excellent stability with no source-drain current drop observed. P-type WSe2(1−x)S2x with a tunable band gap is the ideal complement to n-type tunable monolayers in the application of pn junction-related flexible nanodevices. (letter)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/27/13/13LT01

Additional details

Identifiers

DOI
10.1088/0957-4484/27/13/13LT01;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
27
Journal Issue
13
Journal Page Range
[7 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
48036957
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
CARRIER MOBILITY; EXPERIMENTAL DATA; FIELD EFFECT TRANSISTORS; MEV RANGE 100-1000; PERFORMANCE; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS
Descriptors DEC
DATA; ENERGY RANGE; INFORMATION; MATERIALS; MEV RANGE; MOBILITY; NUMERICAL DATA; SEMICONDUCTOR DEVICES; TRANSISTORS