Published August 1978
| Version v1
Report
Restricted
Electrical characteristics of ion-implanted laser-annealed silicon
Description
The results of electrical measurements on Si implanted with n-type dopants such as P and As and laser annealed are presented
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Pagination
- 8 p.
- Report number
- CONF-780932--4
Conference
- Title
- Conference on ion beam modification of materials.
- Dates
- 4 - 8 Sep 1978.
- Place
- Budapest, Hungary.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 10448306
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ARSENIC IONS; ION IMPLANTATION; LASER RADIATION; PHOSPHORUS IONS; PHYSICAL RADIATION EFFECTS; SILICON; USES
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONS; RADIATION EFFECTS; RADIATIONS; SEMIMETALS