Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%

The results of the development and fabrication of laser diode bars ( λ = 800 – 810 nm) based on AlGaAs/GaAs quantum-well heterostructures with a high efficiency are presented. An increase in the internal quantum and external differential efficiencies together with a decrease in the working voltage and the series resistance allowed us to improve the output parameters of the semiconductor laser under quasi-cw pumping. The output power of the laser diode bars with a 5-mm transverse length reached 210 W, and the efficiency was ∼70%. (letters)