Microwave dielectric properties and co-firing of BiNbO4 ceramics with CuO-WO3 substitution
Creators
- 1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of the Education, Xi'an Jiaotong University, Xi'an 710049 (China)
Description
The effect of CuO and WO3 substitution on the sintering behavior, morphology, the microwave dielectric properties and the co-firing with copper electrode of BiNbO4 ceramics and were studied. With x-value increasing from 0.001 to 0.01, the densified temperatures of Bi(CuxW3xNb1-4x)O4 ceramics decreased from 1010 to 930 deg. C and the grain size decreased as well. The dielectric constant εr was between 38.5 and 43.5 and the Qf values lied between 15,000 and 2000 GHz at about 3.9 GHz. Temperature coefficient of resonant frequencies τf values were between +5.06 and -9.76 ppm/deg. C and decreased with x-value increasing. The CuO and WO3 substitution can adjust the τf values to near zero with proper substitution amount but deteriorate the dielectric properties when substitution amount increased. Copper electrode was found not to penetrate into the ceramic from the SEM and EDS results of the co-fired samples
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2007.06.016Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2007.06.016;
- PII
- S0921-5107(07)00270-X;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 142
- Journal Issue
- 2-3
- Journal Page Range
- p. 106-111
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39097293
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH COMPOUNDS; CERAMICS; COPPER; COPPER OXIDES; DIELECTRIC MATERIALS; ELECTRODES; GHZ RANGE; GRAIN SIZE; MICROWAVE RADIATION; MORPHOLOGY; NIOBIUM OXIDES; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SINTERING; TEMPERATURE COEFFICIENT; TEMPERATURE RANGE 1000-4000 K; TUNGSTATES; TUNGSTEN OXIDES
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; FABRICATION; FREQUENCY RANGE; MATERIALS; METALS; MICROSCOPY; MICROSTRUCTURE; NIOBIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; REACTIVITY COEFFICIENTS; REFRACTORY METAL COMPOUNDS; SIZE; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.