Published August 15, 2006
| Version v1
Journal article
All-chromium single electron transistor fabricated with plasma oxidation
Creators
- 1. Graduate School of Advanced Sciences of Matter (ADSM), Hiroshima University, Higashi-Hiroshima, Hiroshima 739-8530 (Japan)
Description
We fabricated all-chromium single electron transistor using electron beam lithography and shadow evaporation, employing a plasma oxidation technique. This improved the controllability of the tunnel resistance determined in the oxidation process. We measured the device characteristics of the fabricated SET transistor at 90 mK and found that Coulomb blockade with little leakage current, showing excellent quality of the tunnel barrier
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2006.03.055;
- PII
- S0921-4526(06)00745-9;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 383
- Journal Issue
- 1
- Journal Page Range
- p. 57-58
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 3. Hiroshima workshop on novel functional materials with multinary freedoms
- Dates
- 16-19 Nov 2005
- Place
- Higashi-Hiroshima (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38070671
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHROMIUM; COULOMB FIELD; ELECTRON BEAMS; ELECTRONS; FABRICATION; LEAKAGE CURRENT; MASKING; OXIDATION; PLASMA; TRANSISTORS
- Descriptors DEC
- BEAMS; CHEMICAL REACTIONS; CURRENTS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; LEPTON BEAMS; LEPTONS; METALS; PARTICLE BEAMS; SEMICONDUCTOR DEVICES; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.