Refracted X-rays propagating near the surface under grazing incidence condition

X-ray refractions through a silicon wafer and an organic thin film, n-C33H68/Si, were measured using white incident X-rays under a grazing incidence condition. The energy variation of a refracted X-ray beam by a silicon wafer was well explained by the simple Snell's law when the position of the detector (solid-state detector) was changed. On the other hand, two refracted X-ray beams were observed from the organic thin film. The energy variation of one beam which propagated through the silicon substrate followed Snell's law, while that of another beam did not and changed little when the detector position was varied. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)